Phase-change Random Access Memory is a memory of the future, especially intended for mobile devices. It is a combination of the DRAM and FLASH memories, combining the speed of the DRAM memory and low-power operation of the FLASH memory which does not need power supply for storing the data as DRAM memories do, but comparing to FLASH it offers multiple times longer life (more cycles for reading and writing). First samples and messages are coming from Intel and Samsung.
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